LED - Chip - EPIGAP optoelectronic GmbH
Description
LED - Chip
Preliminary Radiation Violet Type Standard 10.
04.
2007 Technology InGaN/Al2O3
ELС-410-37
rev.
02/07 www.
DataSheet4U.
com Electrodes Both on top side
380 µm
typ.
dimensions in µm (±20 µm)
Ø 90µm 380 µm 350 µm 100 µm
P
typ.
thickness 90 (±20) µm cathode gold alloy, 1.
5 µm anode gold alloy, 1.
5 µm
N
350 µm
Optical and Electrical Characteristics
Tamb = 25°C, unless otherwise specified Test Parameter conditions Forward voltage Reverse voltage Radiant power1 Radiant intensity1 Peak wavelength Spectral bandwidth at 50% Switching time
1
Ø100
Symbol VF VR Φe Ιe λp ∆λ0.
5 tr , t f
Min
Typ 3,6
Max 4,5
Unit V V
IF = 20 mA IF = 10 µA IF = 20 mA IF = 20 mA IF = 20 mA IF = 20 mA IF = 20 mA
5 1,9 1,0 400 3,0 1,3 410 17 20 420
mW mW/sr nm nm ns
Measured on bare chip on TO-18 header with EPIGAP equipment
Labeling
Type ELС-410-37 Lot N° Φe(typ) [mW] VF(typ) [V] Quantity
Packing: Chips on adhesive film with wire-bond side on top
EPIGAP Optoelektronik GmbH, D-12555 Berlin, Köpenicker Str.
325 b, Haus 201 Tel.
: +49-30-6576 2543, Fax : +49-30-6576 2545
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- ELC-410-37 LED - Chip - EPIGAP optoelectronic GmbH