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MT54W4MH9B

Part Number	MT54W4MH9B
Manufacturer	Micron Technology
Description	SRAM 2-WORD BURST
Published	Mar 8, 2010
Detailed Description	ADVANCE‡ www.DataSheet4U.com 4 MEG x 8, 4 MEG x 9, 2 MEG x 18, 1 MEG x 36 1.8V VDD, HSTL, QDRIIb2 SRAM 36Mb QDR™II SRAM...
Datasheet	MT54W4MH9B PDF File

Overview

ADVANCE‡ www.
DataSheet4U.
com 4 MEG x 8, 4 MEG x 9, 2 MEG x 18, 1 MEG x 36 1.
8V VDD, HSTL, QDRIIb2 SRAM 36Mb QDR™II SRAM 2-WORD BURST FEATURES • DLL circuitry for accurate output data placement MT54W4MH8B MT54W4MH9B MT54W2MH18B MT54W1MH36B Figure 1 165-Ball FBGA • Separate independent read and write data ports with concurrent transactions • 100 percent bus utilization DDR READ and WRITE operation • Fast clock to valid data times • Full data coherency, providing most current data • Two-tick burst counter for low DDR transaction size • Double data rate operation on read and write ports • Two input clocks (K and K#) for precise DDR timing at clock rising edges only • Two output clocks (C and ...

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