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SSF1016

Silikron Semiconductor Co
Part Number SSF1016
Manufacturer Silikron Semiconductor Co
Description Power switching application
Published Mar 6, 2010
Detailed Description www.DataSheet4U.com SSF1016 Feathers: „ „ „ Advanced trench process technology avalanche energy, 100% test Fully charac...
Datasheet PDF File SSF1016 PDF File

SSF1016
SSF1016


Overview
www.
DataSheet4U.
com SSF1016 Feathers: „ „ „ Advanced trench process technology avalanche energy, 100% test Fully characterized avalanche voltage and current ID =75A BV=100V Rdson=16mΩ(Max.
） Description: The SSF1016 is a new generation of high voltage and low current N–Channel enhancement mode trench power MOSFET.
This new technology increases the device reliability and electrical parameter repeatability.
SSF1016 is assembled in high reliability and qualified assembly house.
Application: „ Power switching application SSF1016 TOP View (T0-220) Absolute Maximum Ratings Parameter ID@Tc=25 ْC ID@Tc=100ْC IDM PD@TC=25ْC VGS EAS EAR dv/dt TJ TSTG Thermal Resistance Parameter RθJC RθJA Junction-to-case Junction-to-ambient Min.
— — Typ.
0.
55 — Max.
— 62 Units ْC/W Continuous drain current,VGS@10V Continuous drain current,VGS@10V Pulsed drain current ① Power dissipation Linear derating factor Gate-to-Source voltage Single pulse avalanche energy ② Repetitive avalanche energy Peak diode recovery voltage Operating Junction and Storage Temperature Range Max.
75 65 300 227 1.
5 ±20 380 TBD 31 –55 to +150 W W/ ْC V mJ mJ v/ns ْC A Units Electrical Characteristics @TJ=25 ْC(unless otherwise specified) Parameter BVDSS VGS(th) IDSS Drain-to-Source breakdown voltage Gate threshold voltage Drain-to-Source leakage current Gate-to-Source forward leakage Gate-to-Source reverse leakage RDS(on) Static Drain-to-Source on-resistance Min.
100 — 2.
0 — — — — 2009.
8.
10 Typ.
— 11 — — — — — Max.
Units — 16 4.
0 2 10 100 -100 V V Test Conditions VGS=0V,ID=250μA VDS=VGS,ID=250μA VDS=100V,VGS=0V mΩ VGS=10V,ID=30A μA VDS=100V, VGS=0V,TJ=150ْC nA VGS=20V VGS=-20V Version : 1.
0 page 1of5 IGSS ©Silikron Semiconductor CO.
,LTD.
www.
DataSheet4U.
com SSF1016 Qg Qgs Qgd td(on) tr td(off) tf Ciss Coss Crss Total gate charge Gate-to-Source charge Gate-to-Drain("Miller") charge Turn-on delay time Rise time Turn-Off delay time Fall time Input capacitance Output capacitance Reverse transfer capacitance ...


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