20V Dual N-Channel MOSFET - Taiwan Semiconductor Company
Description
20V Dual N-Channel MOSFET
PRODUCT SUMMARY VDS (V) RDS(on)(mΩ)
20 25 @ VGS = 4.
5V 35 @ VGS = 2.
5V
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TSM4426
SOP-8
Pin Definition: 1.
Source 2.
Source 3.
Source 4.
Gate 5, 6, 7, 8.
Drain
ID (A)
8.
0 6.
0
Features
● ● Advance Trench Process Technology High Density Cell Design for Ultra Low On-resistance
Block Diagram
Application
● ● Specially Designed for Li-on Battery Packs Battery Switch Application
Ordering Information
Part No.
TSM4426CS RL
Package
SOP-8
Packing
2.
5Kpcs / 13” Reel N-Channel MOSFET
Absolute Maximum Rating (Ta = 25oC unless otherwise noted)
Parameter
Drain-Source Voltage Gate-Source Voltage Continuous Drain Current Pulsed Drain Current Continuous Source Current (Diode Conduction) Maximum Power Dissipation Operating Junction Temperature Operating Junction and Storage Temperature Range
a,b o o
Symbol
VDS VGS ID IDM IS PD TJ TJ, TSTG Ta = 25 C Ta = 75 C
Limit
20 ±12 8 30 1.
7 1.
6 1.
1 +150 -55 to +150
Unit
V V A A A W
o o
C C
Thermal Performance
Parameter
Junction to Case Thermal Resistance Junction to Ambient Thermal Resistance (PCB mounted) Notes: a.
Pulse width limited by the Maximum junction temperature b.
Surface Mounted on FR4 Board, t ≤ 5 sec.
Symbol
RӨJC RӨJA
Limit
40 77
Unit
o o
C/W C/W
1/6
Version: A07
20V Dual N-Channel MOSFET
Electrical Specifications
Parameter
Static Drain-Source Breakdown Voltage Gate Threshold Voltage Gate Body Leakage Zero Gate Voltage Drain Current On-State Drain Current Drain-Source On-State Resistance Forward Transconductance Diode Forward Voltage Dynamic
b
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TSM4426
Conditions
VGS = 0V, ID = 250uA VDS = VGS, ID = 250uA VGS = ±12V, VDS = 0V VDS = 20V, VGS = 0V VDS =5V, VGS = 4.
5V VGS = 4.
5V, ID = 8.
0A VGS = 2.
5V, ID = 6.
0A VDS = 10V, ID = 6A IS = 1.
7A, VGS = 0V
Symbol
BVDSS VGS(TH) IGSS IDSS ID(ON) RDS(ON) gfs VSD Qg Qgs Qgd Ciss Coss Crss td(on) tr td(off)
Min
20 0.
6 --30 -----
Typ
-----19 25 30 0.
7
Max
--±100 1.
0 -25 35 -1.
2
Unit
V V nA uA A mΩ S V
Tota...
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