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SI4684DY_RC

Part Number	SI4684DY_RC
Manufacturer	Vaishali Semiconductor
Description	R-C Thermal Model Parameters
Published	Feb 27, 2010
Detailed Description	Si4684DY_RC Vishay Siliconix www.DataSheet4U.com R-C Thermal Model Parameters DESCRIPTION The parametric values in the...
Datasheet	SI4684DY_RC PDF File

Overview

Si4684DY_RC Vishay Siliconix www.
DataSheet4U.
com R-C Thermal Model Parameters DESCRIPTION The parametric values in the R-C thermal model have been derived using curve-fitting techniques.
These techniques are described in "A Simple Method of Generating Thermal Models for a Power MOSFET"[1].
When implemented in P-Spice, these values have matching characteristic curves to the Single Pulse Transient Thermal Impedance curves for the MOSFET.
R-C values for the electrical circuit in the Foster/Tank configuration are included.
The corresponding values for the Cauer/Filter configuration are available upon request.
Note: For a detailed explanation of implementing these values in P-SPICE, refer to...

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SI4684DY_RC R-C Thermal Model Parameters - Vaishali Semiconductor

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