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MRF8S9260HSR3

Part Number	MRF8S9260HSR3
Manufacturer	Freescale Semiconductor
Description	RF Power Field Effect Transistors
Published	Feb 9, 2010
Detailed Description	Freescale Semiconductor Technical Data RF Power Field Effect Transistors N--Channel Enhancement--Mode Lateral MOSFETs D...
Datasheet	MRF8S9260HSR3 PDF File

Overview

Freescale Semiconductor Technical Data RF Power Field Effect Transistors N--Channel Enhancement--Mode Lateral MOSFETs Designed for CDMA and multicarrier GSM base station applications with frequencies from 865 to 960 MHz.
Can be used in Class AB and Class C for all typical cellular base station modulation formats.
 BITDyaQpni=dcwa1li7dS0tihn0g=mle3A--.
,8CP4aorMuritHe=rzW,7I5n--pWCuDattMStsiAgAnPvaeglr.
P,foAIQrRmMa=na7cg.
en5:itdVuBdDeD@C=0l2ip.
80p1iVn%ogl,tPsCr,ohbaanbnielitly on CCDF.
Frequency Gps (dB) D Output PAR ACPR (%) (dB) (dBc) 920 MHz 18.
8 36.
0 6.
3 --39.
5 940 MHz 18.
7 37.
0 6.
2 --38.
6 960 MHz 18.
6 38.
5 5.
9 --37.
1  Capable of Handling 7:1 VSWR, @ 32 Vdc, 940 MHz, 38...

Similar Datasheet

MRF8S9260HSR3 RF Power Field Effect Transistors - Freescale Semiconductor

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