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MRF8S9220HR3

Part Number	MRF8S9220HR3
Manufacturer	Freescale Semiconductor
Description	RF Power Field Effect Transistors
Published	Feb 9, 2010
Detailed Description	Freescale Semiconductor Technical Data Document Number: MRF8S9220H Rev. 0, 11/2009 RF Power Field Effect Transistors ...
Datasheet	MRF8S9220HR3 PDF File

Overview

Freescale Semiconductor Technical Data Document Number: MRF8S9220H Rev.
0, 11/2009 RF Power Field Effect Transistors N - Channel Enhancement - Mode Lateral MOSFETs Designed for CDMA base station applications with frequencies from 920 to 960 MHz.
Can be used in Class AB and Class C for all typical cellular base station modulation formats.
• Typical Single- Carrier W - CDMA Performance: VDD = 28 Volts, IDQ = 1600 mA, Pout = 65 Watts Avg.
, IQ Magnitude Clipping, Channel Bandwidth = 3.
84 MHz, Input Signal PAR = 7.
5 dB @ 0.
01% Probability on CCDF.
Frequency 920 MHz 940 MHz 960 MHz Gps (dB) 19.
7 19.
8 19.
4 hD (%) 35.
1 35.
3 35.
7 Output PAR (dB) 6.
1 6.
2 6.
1 ACPR (dBc) - 37.
4 - 37.
5 - 37.
4 MRF8S92...

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