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MRF8S9100HSR3

Part Number	MRF8S9100HSR3
Manufacturer	Freescale Semiconductor
Description	RF Power Field Effect Transistors
Published	Feb 9, 2010
Detailed Description	Freescale Semiconductor Technical Data Document Number: MRF8S9100H Rev. 0, 9/2009 RF Power Field Effect Transistors N...
Datasheet	MRF8S9100HSR3 PDF File

Overview

Freescale Semiconductor Technical Data Document Number: MRF8S9100H Rev.
0, 9/2009 RF Power Field Effect Transistors N - Channel Enhancement - Mode Lateral MOSFETs Designed for GSM and GSM EDGE base station applications with frequencies from 865 to 960 MHz.
Can be used in Class AB and Class C for all typical cellular base station modulation formats.
• Typical GSM Performance: VDD = 28 Volts, IDQ = 500 mA, Pout = 72 Watts CW Frequency 920 MHz 940 MHz 960 MHz Gps (dB) 19.
3 19.
3 19.
1 hD (%) 51.
6 52.
9 54.
1 MRF8S9100HR3 MRF8S9100HSR3 920 - 960 MHz, 72 W CW, 28 V GSM, GSM EDGE LATERAL N - CHANNEL RF POWER MOSFETs • Capable of Handling 10:1 VSWR, @ 32 Vdc, 940 MHz, 133 Watts CW Output Power (3 ...

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MRF8S9100HSR3 RF Power Field Effect Transistors - Freescale Semiconductor

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