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MRF8S21200HSR6

Part Number	MRF8S21200HSR6
Manufacturer	Freescale Semiconductor
Description	RF Power Field Effect Transistors
Published	Feb 9, 2010
Detailed Description	Freescale Semiconductor Technical Data Document Number: MRF8S21200H Rev. 1, 11/2009 RF Power Field Effect Transistors ...
Datasheet	MRF8S21200HSR6 PDF File

Overview

Freescale Semiconductor Technical Data Document Number: MRF8S21200H Rev.
1, 11/2009 RF Power Field Effect Transistors N - Channel Enhancement - Mode Lateral MOSFETs Designed for W - CDMA and LTE base station applications with frequencies from 2110 to 2170 MHz.
Can be used in Class AB and Class C for all typical cellular base station modulation formats.
• Typical Single - Carrier W - CDMA Performance: VDD = 28 Volts, IDQ = 1400 mA, Pout = 48 Watts Avg.
, IQ Magnitude Clipping, Channel Bandwidth = 3.
84 MHz, Input Signal PAR = 7.
5 dB @ 0.
01% Probability on CCDF.
Frequency 2110 MHz 2140 MHz 2170 MHz Gps (dB) 17.
8 18.
1 18.
1 hD (%) 32.
6 32.
6 32.
9 Output PAR (dB) 6.
4 6.
3 6.
2 ACPR (dBc) - 37.
7 - 3...

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MRF8S21200HSR6 RF Power Field Effect Transistors - Freescale Semiconductor

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