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MJ11016

Part Number	MJ11016
Manufacturer	Inchange Semiconductor
Description	Silicon NPN Darlington Power Transistor
Published	Feb 9, 2010
Detailed Description	isc Silicon NPN Darlington Power Transistor INCHANGE Semiconductor MJ11016 DESCRIPTION ·Collector-Emitter Breakdown Vo...
Datasheet	MJ11016 PDF File

Overview

isc Silicon NPN Darlington Power Transistor INCHANGE Semiconductor MJ11016 DESCRIPTION ·Collector-Emitter Breakdown Voltage : V(BR)CEO= 120V(Min.
) ·High DC Current Gain- : hFE= 1000(Min.
)@IC= 20A ·Low Collector Saturation Voltage- : VCE (sat)= 3.
0V(Max.
)@ IC= 20A ·Complement to the PNP MJ11015 ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for use as output devices in complementary general purpose amplifier applications.
ABSOLUTE MAXIMUM RATINGS (Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 120 V VCEO Collector-Emitter Voltage 120 V VEBO Emitter-Base Voltage 5 V IC Collector Current-Continunou...

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