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2N5551HR

STMicroelectronics
Part Number 2N5551HR
Manufacturer STMicroelectronics
Description Hi-Rel NPN bipolar transistor
Published Feb 4, 2010
Detailed Description 2N5551HR Datasheet Rad-Hard 160 V, 0.5 A NPN bipolar transistor 3 1 2 LCC-3 3 4 1 2 UB Pin 4 in UB is connected to ...
Datasheet PDF File 2N5551HR PDF File

2N5551HR
2N5551HR

Overview
2N5551HR Datasheet Rad-Hard 160 V, 0.
5 A NPN bipolar transistor 3 1 2 LCC-3 3 4 1 2 UB Pin 4 in UB is connected to the metallic lid.
C (3) (2) B E (1) DS10450 Product status link 2N5551HR Features Vceo IC(max.
) 160 V 0.
5 A • Hermetic packages • ESCC and JANS qualified • Up to 100 krad(Si) low dose rate HFE at 5 V, 10 mA > 80 Tj(max.
) 200 °C Description This bipolar transistor is able to operate under severe environment conditions and radiation exposure providing high immunity to total ionizing dose (TID).
All part numbers are guaranteed up to 100 krad with low dose rate at 0.
1 rad/s as per ESCC 22900.
Qualified as per ESCC 5201/019 and MIL-PRF-19500/767 specifications and av...


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