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2SD649

Part Number	2SD649
Manufacturer	Inchange Semiconductor
Description	Silicon NPN Power Transistor
Published	Feb 3, 2010
Detailed Description	INCHANGE Semiconductor isc Product Specification isc Silicon NPN Power Transistor 2SD649 DESCRIPTION ·High Breakdown...
Datasheet	2SD649 PDF File

Overview

INCHANGE Semiconductor isc Product Specification isc Silicon NPN Power Transistor 2SD649 DESCRIPTION ·High Breakdown Voltage: VCBO= 1500V (Min) ·High Reliability APPLICATIONS ·Designed for line-operated horizontal deflection output applications.
ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage VCES Collector-Emitter Voltage VEBO Emitter-Base Voltage C com I Collector Current- Continuous w w s c s i .
w 1500 1500 5 3 5 35 V V n c .
i m e V A ICP Collector Current-Pulse A PC Collector Power Dissipation @ TC≤90℃ W TJ Junction Temperature 130 ℃ Tstg Storage Temperature Range -65~130 ℃ isc Website：www.
isc...

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