P-Channel Enhancement Mode Power MosFET - SeCoS
Description
SMG1333
-550mA, -20V,RDS(ON) 800m£[ Elektronische Bauelemente
P-Channel Enhancement Mode Power Mos.
FET
RoHS Compliant Product
A suffix of "-C" specifies halogen & lead-free
A
SC-59 Dim A Min 2.
70 1.
40 1.
00 0.
35 1.
70 0.
00 0.
10 0.
20 0.
85 2.
40 Max 3.
10 1.
60 1.
30 0.
50 2.
10 0.
10 0.
26 0.
60 1.
15 2.
80
Description
The SMG1333 provide the designer with the best combination of fast switching, low on-resistance
S
2
L
3 Top View
B
1
B C D
and cost-effectiveness.
D
G H
C J K
Features
* Simple Gate Drive * Small package outline * Fast switching speed
H
G
J K L
Drain Gate Source
S
D
Applications
* Power Management in Notebook Computer * Protable Equipment * Battery Powered System
All Dimension in mm
G
Marking : 1333
S
Absolute Maximum Ratings
Parameter
Drain-Source Voltage Sate-Source Voltage www.
DataSheet4U.
com Continuous Drain Current Continuous Drain Current Pulsed Drain Current
1,2
Symbol
VDS VGS
Ratings
-20
±12
Unit
V V mA mA A W
W/ C
o o
3
ID@TA=25 C ID@TA=70 C IDM PD@TA=25 C
o o
o
-550 -440 -2.
5 1 0.
008
3
Total Power Dissipation Linear Derating Factor Operating Junction and Storage Temperature Range
Tj, Tstg
-55~+150
C
Thermal Data
Parameter
Thermal Resistance Junction-ambient 3
Symbol
Rthj-a
Ratings
125
o
Unit
C /W
http://www.
SeCoSGmbH.
com/
Any changing of specification will not be informed individual
01-Jun-2002 Rev.
A
Page 1 of 4
SMG1333
Elektronische Bauelemente -550mA, -20V,RDS(ON) 800m£[ P-Channel Enhancement Mode Power Mos.
FET
Electrical Characteristics( Tj=25 C Unless otherwise specified)
Parameter
Drain-Source Breakdown Voltage Breakdown Voltage Temp.
Coefficient Gate Threshold Voltage Gate-Source Leakage Current
o Drain-Source Leakage Current (Tj=25 C)
o
Symbol
BVDSS BVDS/ Tj VGS(th) IGSS IDSS
Min.
-20
_
Typ.
_
Max.
_ _
Unit
V V/ V nA uA uA
Test Condition
VGS=0V, ID=-250uA Reference to 25 C,ID=-1mA VDS=VGS, ID=-250uA VGS=± 12V VDS=-20V,VGS=0 VDS=-16V,VGS=0 VGS=-10V, ID=-550mA
o
-0.
01
_ _ _ _ _ _
-0.
5
_ _ _ _
-1.
2
±...
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