N-Channel Enhancement Mode Power MosFET - SeCoS
Description
SMG1332E
Elektronische Bauelemente 600mA, 20V,RDS(ON)600m£[
N-Channel Enhancement Mode Power Mos.
FET
RoHS Compliant Product
Description
The SMG1332E provide the designer with best combination of fast swirching, low on-resistance and cost-effectiveness.
S
2
A L
3 Top View
SC-59 Dim A
B
1
Min 2.
70 1.
40 1.
00 0.
35 1.
70 0.
00 0.
10 0.
20 0.
85 2.
40
Max 3.
10 1.
60 1.
30 0.
50 2.
10 0.
10 0.
26 0.
60 1.
15 2.
80
B C D G H J
K
D
Features
* Simple Gate Drive * 2KV ESD Rating (Per MIL-STD-883D) * Small Package Outline
H
G C J
K L S
Drain Gate Source
All Dimension in mm
D
G
S
Absolute Maximum www.
DataSheet4U.
com
Drain-Source Voltage Gate-Source Voltage Continuous Drain Current Continuous Drain Current Pulsed Drain Current
1,2 3 3
Ratings
Symbol
VDS VGS ID@TA=25 C ID@TA=70 C IDM PD@TA=25 C
o o o
Parameter
Ratings
20
±5 600 470 2.
5 1.
0 0.
008
Unit
V V mA mA A W
W / oC
o
Total Power Dissipation Linear Derating Factor Operating Junction and Storage Temperature Range
Tj, Tstg
-55~+150
C
Thermal Data
Parameter
Thermal Resistance Junction-ambient
3
Symbol
Max.
Rthj-a
Ratings
125
Unit
o
C /W
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SeCoSGmbH.
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Any changing of specification will not be informed individual
01-Jan-2006 Rev.
B
Page 1 of 4
SMG1332E
Elektronische Bauelemente 600mA, 20V,RDS(ON)600m£[
N-Channel Enhancement Mode Power Mos.
FET
Electrical Characteristics( Tj=25 C
Parameter
Drain-Source Breakdown Voltage Breakdown Voltage Temp.
Coefficient Gate Threshold Voltage Gate-Source Leakage Current Drain-Source Leakage Current (Tj=25 C) Drain-Source Leakage Current (Tj=70 oC) Static Drain-Source On-Resistance
o
o
Unless otherwise specified)
Symbol
BVDSS
Min.
20
_
Typ.
_
Max.
_ _
Unit
V V/ C V uA uA uA
o
Test Condition
VGS=0V, ID=250uA Reference to 25 C, ID=1mA VDS=VGS, ID=250uA VGS=±5V VDS=20V,VGS=0 VDS=16V,VGS=0 VGS=4.
5V, ID=600mA VGS=2.
5V, ID=400mA
o
BVDS/ Tj VGS(th) IGSS IDSS
0.
02
_ _ _ _ _ _
0.
5
_ _ _ _
1.
2
±10
1 10 600 1200
2
_
_ _
RDS(ON) Qg Qgs Qgd Td(ON) Tr Td(Off) Tf Cis...
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