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PBSS304NX

NXP Semiconductors
Part Number PBSS304NX
Manufacturer NXP Semiconductors
Description NPN low VCEsat Breakthrough In Small Signal (BISS) transistor
Published Jan 11, 2010
Detailed Description PBSS304NX 60 V, 4.7 A NPN low VCEsat (BISS) transistor Rev. 02 — 20 November 2009 Product data sheet 1. Product profile...
Datasheet PDF File PBSS304NX PDF File

PBSS304NX
PBSS304NX

Overview
PBSS304NX 60 V, 4.
7 A NPN low VCEsat (BISS) transistor Rev.
02 — 20 November 2009 Product data sheet 1.
Product profile 1.
1 General description NPN low VCEsat Breakthrough In Small Signal (BISS) transistor in a SOT89 (SC-62/TO-243) small and flat lead Surface-Mounted Device (SMD) plastic package.
PNP complement: PBSS304PX.
1.
2 Features „ „ „ „ „ Low collector-emitter saturation voltage VCEsat High collector current capability IC and ICM High collector current gain (hFE) at high IC High efficiency due to less heat generation Smaller required Printed-Circuit Board (PCB) area than for conventional transistors 1.
3 Applications „ „ „ „ „ High-voltage DC-to-DC conversion High-voltage MOSFET gat...


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