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BLD6G21LS-50

NXP Semiconductors
Part Number BLD6G21LS-50
Manufacturer NXP Semiconductors
Description TD-SCDMA 2010 MHz to 2025 MHz fully integrated Doherty transistor
Published Jan 11, 2010
Detailed Description BLD6G21L-50; BLD6G21LS-50 TD-SCDMA 2010 MHz to 2025 MHz fully integrated Doherty transistor Rev. 01 — 28 October 2009 Ob...
Datasheet PDF File BLD6G21LS-50 PDF File

BLD6G21LS-50
BLD6G21LS-50

Overview
BLD6G21L-50; BLD6G21LS-50 TD-SCDMA 2010 MHz to 2025 MHz fully integrated Doherty transistor Rev.
01 — 28 October 2009 Objective data sheet 1.
Product profile 1.
1 General description The BLD6G21L-50 and BLD6G21LS-50 incorporate a fully integrated Doherty solution using NXP’s state of the art GEN6 LDMOS technology.
This device is perfectly suited for TD-SCDMA base station applications at frequencies from 2010 MHz to 2025 MHz.
The main and peak device, input splitter and output combiner are integrated in a single package.
This package consists of one gate and drain lead and two extra leads of which one is used for biasing the peak amplifier and the other is not connected.
It only requires the pr...


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