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2SK3541SPT

Part Number	2SK3541SPT
Manufacturer	Chenmko Enterprise
Description	N-Channel Enhancement Mode Field Effect Transistor
Published	Jan 5, 2010
Detailed Description	CHENMKO ENTERPRISE CO.,LTD SURFACE MOUNT N-Channel Enhancement Mode Field Effect Transistor VOLTAGE 30 Volts APPLICATION...
Datasheet	2SK3541SPT PDF File

Overview

CHENMKO ENTERPRISE CO.
,LTD SURFACE MOUNT N-Channel Enhancement Mode Field Effect Transistor VOLTAGE 30 Volts APPLICATION * Interfacing, switching (30V, 100mA) 2SK3541SPT CURRENT 100 mAmpere FEATURE * Small surface mounting type.
(SC-88/SOT-363) * Low on-resistance * Fast switching speed * Easily designed drive circuits * Easy to parallel 1.
2~1.
4 (1)(S1) SC-88/SOT-363 (D1)(6) (G1) (G2) (D2) 0.
65 0.
65 2.
0~2.
2 CONSTRUCTION Silicon N-Channel MOSFET 0.
15~0.
35 (3) (S2)(4) 1.
15~1.
35 0.
08~0.
15 0.
1 Min.
0.
8~1.
1 0~0.
1 2.
15~2.
45 CIRCUIT (6) D1 G2 S2(4) (1)S1 G1 D2(3) Dimensions in millimeters SC-88/SOT-363 Absolute Maximum Ratings Symbol Parameter www.
DataSheet4U.
com TA = 25°C unless otherwise noted 2SK3541SPT Units VDSS VGSS ID IDR Drain-Source Voltage Gate-Source Voltage - Continuous Drain Current - Continuous - Pulsed (Note1) Reverse Drain Current - Continuous - Pulsed (Note1) 30 V V mA mA mA mA mW °C °C 2007-02 ±20 100 400 100 400 150 -55 to 150 -55 to 150 PD TJ TSTG Power Dissipation (Note2) Operating Temperature Range Storage Temperature Range Note: 1.
Pw < 10uA , Duty cycle < 1% 2.
With each pin mounted on the recommended land RATING CHARACTERISTIC CURVES ( 2SK3541SPT ) Electrical Characteristics T Symbol Parameter A = 25°C unless otherwise noted Conditions Min Typ Max Units OFF CHARACTERISTICS BVDSS IDSS IGSSF IGSSR Drain-Source Breakdown Voltage Zero Gate Voltage Drain Current VGS = 0 V, ID = 10µA VDS = 30 V, VGS = 0 V TC=125°C VGS = 20 V, VDS = 0 V VGS = -20 V, VDS = 0 V 30 1 0.
5 1 -1 V µA mA µA µA Gate - Body Leakage, Forward Gate - Body Leakage, Reverse ON CHARACTERISTICS VGS(th) RDS(ON) Gate Threshold Voltage VDS = 3V, ID = 100 µA 0.
8 5.
0 7.
0 20 1.
65 8.
0 13 V Static Drain-Source On-Resistance VGS = 4.
0 V, ID = 10 mA VGS = 2.
5 V, ID = 1.
0 mA Ω mS gFS Forward Transconductance VDS = 3.
0 V , ID = 10 m A DYNAMIC CHARACTERISTICS Ciss Coss Crss ton tr toff Input Capacitance Output Capacitance Reverse Transfer ...

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2SK3541SPT N-Channel Enhancement Mode Field Effect Transistor - Chenmko Enterprise

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