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2SK3541PT

Chenmko Enterprise
Part Number 2SK3541PT
Manufacturer Chenmko Enterprise
Description N-Channel Enhancement Mode Field Effect Transistor
Published Jan 5, 2010
Detailed Description CHENMKO ENTERPRISE CO.,LTD SURFACE MOUNT N-Channel Enhancement Mode Field Effect Transistor VOLTAGE 30 Volts APPLICATION...
Datasheet PDF File 2SK3541PT PDF File

2SK3541PT
2SK3541PT

Overview
CHENMKO ENTERPRISE CO.
,LTD SURFACE MOUNT N-Channel Enhancement Mode Field Effect Transistor VOLTAGE 30 Volts APPLICATION * Interfacing, switching (30V, 100mA) 2SK3541PT CURRENT 100 mAmpere FEATURE * Small surface mounting type.
(SOT-723) * Low on-resistance * Fast switching speed * Easily designed drive circuits * Easy to parallel 0.
8 0.
22 (2) SOT-723 (S) (3) (D) (1) 0.
4 1.
2 0.
4 (G) CONSTRUCTION Silicon N-Channel MOSFET 0.
32 0.
8 0.
22 0.
13 0.
15Max.
D 0.
5 0.
5±0.
5 CIRCUIT 1G S 3 2 TA = 25°C unless otherwise noted Dimensions in millimeters SOT-723 Absolute Maximum Ratings Symbol Parameter 2SK3541PT Units VDSS VGSS ID IDR Drain-Source Voltage Gate-Source Voltage - Continuous Drain Current - Continuous - Pulsed (Note1) Reverse Drain Current - Continuous - Pulsed (Note1) 30 V V mA mA mA mA mW °C °C 2004-06 ±20 100 400 100 400 150 150 -55 to 150 PD TJ TSTG Power Dissipation (Note2) Operating Temperature Range Storage Temperature Range Note: 1.
Pw < 10uA , Duty cycle < 1% 2.
With each pin mounted on the recommended land RATING CHARACTERISTIC CURVES ( 2SK3541PT ) Electrical Characteristics T Symbol Parameter A = 25°C unless otherwise noted Conditions Min Typ Max Units OFF CHARACTERISTICS BVDSS IDSS IGSSF IGSSR Drain-Source Breakdown Voltage Zero Gate Voltage Drain Current VGS = 0 V, ID = 10µA VDS = 30 V, VGS = 0 V TC=125°C VGS = 20 V, VDS = 0 V VGS = -20 V, VDS = 0 V 30 1 0.
5 1 -1 V µA mA µA µA Gate - Body Leakage, Forward Gate - Body Leakage, Reverse ON CHARACTERISTICS VGS(th) RDS(ON) Gate Threshold Voltage VDS = 3V, ID = 100 µA 0.
8 5.
0 7.
0 20 1.
5 8.
0 13 V Static Drain-Source On-Resistance VGS = 4.
0 V, ID = 10 mA VGS = 2.
5 V, ID = 1.
0 mA Ω mS gFS Forward Transconductance VDS = 3.
0 V , ID = 10 m A DYNAMIC CHARACTERISTICS Ciss Coss Crss ton tr toff Input Capacitance Output Capacitance Reverse Transfer Capacitance Turn-On Time VDS = 5.
0 V, VGS = 0 V, f = 1.
0 MHz 13 9 4 pF VDD = 5.
0 V, RL = 500 Ω, ID = 10 mA, VGS = ...


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