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2SK3544

Toshiba Semiconductor
Part Number 2SK3544
Manufacturer Toshiba Semiconductor
Description Silicon N-Channel MOS Type FET
Published Jan 5, 2010
Detailed Description 2SK3544 TOSHIBA Field-Effect Transistor Silicon N-Channel MOS Type (π-MOS V) 2SK3544 Switching Regulator Applications •...
Datasheet PDF File 2SK3544 PDF File

2SK3544
2SK3544

Overview
2SK3544 TOSHIBA Field-Effect Transistor Silicon N-Channel MOS Type (π-MOS V) 2SK3544 Switching Regulator Applications • • • • Low drain-source ON-resistance: RDS (ON) = 0.
29 Ω (typ.
) High forward transfer admittance: |Yfs| = 5.
8 S (typ.
) Low leakage current: IDSS = 100 μA (max) (VDSS = 450 V) Enhancement mode: Vth = 3.
0 to 5.
0 V (VDS = 10 V, ID = 1 mA) Unit: mm Absolute Maximum Ratings (Ta = 25°C) Characteristic Drain–source voltage Drain–gate voltage (RGS = 20 kΩ) Gate–source voltage Drain current DC Pulse (Note 1) (Note 1) Symbol VDSS VDGR VGSS ID IDP PD EAS IAR EAR Tch Tstg Rating 450 450 ±30 13 52 100 350 13 4.
5 150 −55 to 150 Unit V V V A W mJ A mJ °C °C Drain power dissipation (Tc = 25°C) Single-pulse avalanche energy (Note 2) Avalanche current Repetitive avalanche energy (Note 3) Channel temperature Storage temperature range JEDEC JEITA TOSHIBA ― SC-67 2-10R1B Weight: 0.
74 g (typ.
) Note: Using continuously under heavy loads (e.
g.
the application of high temperature/current/voltage and the significant change in temperature, etc.
) may cause this product to decrease in the reliability significantly even if the operating conditions (i.
e.
www.
DataSheet4U.
com operating temperature/current/voltage, etc.
) are within the absolute maximum ratings.
Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook (“Handling Precautions”/’’Derating Concept and Methods’’) and individual reliability data (i.
e.
reliability test report and estimated failure rate, etc).
Thermal Characteristics Characteristic Thermal resistance, channel to case Symbol Rth (ch-c) Max 1.
25 Unit °C/W 4 1 Note 1: Ensure that the channel temperature does not exceed 150°C.
Note 2: VDD = 90 V, Tch = 25°C (initial), L = 3.
46 mH, RG = 25 Ω, IAR = 13 A Note 3: Repetitive rating; pulse width limited by maximum channel temperature This transistor is an electrostatic-sensitive device.
Handle with care.
3 1 2007-10-01 2SK3544 Electrical Characteristics (Ta...


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