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2SF292200CYY

Silan Microelectronics
Part Number 2SF292200CYY
Manufacturer Silan Microelectronics
Description ULTRAFAST RECOVERY DIODE CHIPS
Published Nov 22, 2009
Detailed Description 2SF292200CYY 2SF292200CYY ULTRAFAST RECOVERY DIODE CHIPS DESCRIPTION Ø Ø Ø Ø Ø Ø Ø Ø 2SF292200CYY is a ultrafast recover...
Datasheet PDF File 2SF292200CYY PDF File

2SF292200CYY
2SF292200CYY

Overview
2SF292200CYY 2SF292200CYY ULTRAFAST RECOVERY DIODE CHIPS DESCRIPTION Ø Ø Ø Ø Ø Ø Ø Ø 2SF292200CYY is a ultrafast recovery diode chips fabricated in silicon epitaxial planar technology; Ultrafast recovery times; High current capability; High surge current capability; Low forward voltage drop; Low reverse current leakage; Top metal is Ag, Back metal is Ag; Chip Size: 2920µm X 2920µm; Chip Thickness: 280±20µm; Chip Topography and Dimensions La: Chip Size:2920 µm; Lb: Pad Size: 2840 µm; Ø ORDERING SPECIFICATIONS Product Name 2SF292200CYY Specification For Au and AlSi wire bonding package ABSOLUTE MAXIMUM RATINGS Parameters Maximum Repetitive Peak Reverse Voltage www.
DataSheet4U.
com Average Forward RectifiedCurrent@Tc=150°C Peak Forward Surge Current@8.
3ms Maximum Operation Junction Temperature Storage Temperature Range Symbol VRRM IFAV IFSM TJ TSTG Ratings 200 15 200 175 -55~175 Unit V A A °C °C ELECTRICAL CHARACTERISTICS (Tamb=25 Parameters Reverse Voltage Forward Voltage Reverse Current Reverse recovery time Symbol VBR VF IR Trr ) Test Conditions Min.
200 ---Max.
-1.
05 10 35 Unit V V A IR=50 A IF=15A VR=200V IF=1A,di/dt=50A/ s ns HANGZHOU SILAN MICROELECTRONICS CO.
,LTD Http: www.
silan.
com.
cn REV:1.
0 2008.
06.
06 Page 1 of 1 ...


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