DatasheetsPDF.com

EIB1011-2P

Excelics Semiconductor
Part Number EIB1011-2P
Manufacturer Excelics Semiconductor
Description Internally Matched Power FET
Published Nov 20, 2009
Detailed Description Excelics • • • • • • 10.7-11.7GHz BANDWIDTH AND INPUT/OUTPUT IMPEDANCE MATCHED TO 50 OHM EIA FEATURES HIGH PAE( 30% TYPI...
Datasheet PDF File EIB1011-2P PDF File

EIB1011-2P
EIB1011-2P

Overview
Excelics • • • • • • 10.
7-11.
7GHz BANDWIDTH AND INPUT/OUTPUT IMPEDANCE MATCHED TO 50 OHM EIA FEATURES HIGH PAE( 30% TYPICAL) EIB FEATURES HIGH IP3(46dBm TYPICAL) +33.
5/+33.
0dBm TYPICAL P1dB OUTPUT POWER FOR EIA/EIB 9.
5/8.
5dB TYPICAL G1dB POWER GAIN FOR EIA/EIB NON-HERMETIC METAL FLANGE PACKAGE EIA/EIB1011-2P Not recommended for new designs.
Contact factory.
Effective 03/2003 10.
7-11.
7GHz, 2W Internally Matched Power FET ELECTRICAL CHARACTERISTICS (Ta = 25 OC) EIA1011-2P SYMBOLS PARAMETERS/TEST CONDITIONS Output Power at 1dB Compression f=10.
7-11.
7GHz Vds=8V, Idsq=0.
5 Idss(EIA), 0.
6Idss(EIB) Gain at 1dB Compression f=10.
7-11.
7GHz Vds=8V, Idsq=0.
5 Idss(EIA), 0.
6Idss(EIB) Power Added Efficiency at 1dB compression f=10.
7-11.
7GHz Vds=8V, Idsq=0.
5 Idss(EIA), 0.
6Idss(EIB) Drain Current at 1dB Compression Output 3 Order Intercept Point f=10.
7-11.
7GHz Vds=8V, Idsq=0.
5 Idss(EIA), 0.
6Idss(EIB) Saturated Drain Current Vds=3V, Vgs=0V Transconductance Pinch-off Voltage Vds=3V, Vgs=0V Vds=3V, Ids=12mA -13 1100 rd EIB1011-2P MAX MIN 32 7.
5 TYP 33.
0 8.
5 MAX UNIT dBm dB MIN 32.
5 8.
5 TYP 33.
5 9.
5 P1dB G1dB PAE Id1dB IP3 Idss Gm Vp www.
DataSheet4U.
com BVgd Rth 30 880 40 1440 1500 -1.
0 -15 8 -2.
5 1700 1100 25 850 46* 1360 700 -2.
0 -15 8 o % mA dBm 1700 mA mS -3.
5 V V C/W Drain Breakdown Voltage Igd=4.
8mA Thermal Resistance (Au-Sn Eutectic Attach) *Typical –45dBc IM3 at Pout=23dBm/Tone MAXIMUM RATINGS AT 25OC SYMBOLS Vds Vgs Ids Igsf Pin Tch Tstg Pt PARAMETERS Drain-Source Voltage Gate-Source Voltage Drain Current Forward Gate Current Input Power Channel Temperature Storage Temperature Total Power Dissipation ABSOLUTE1 12V -8V Idss 180mA 32dBm 175oC -65/175oC 17W 8V -3V Idss 30mA @ 3dB Compression 150oC -65/150oC 14.
2W CONTINUOUS2 Note: 1.
Exceeding any of the above ratings may result in permanent damage.
2.
Exceeding any of the above ratings may reduce MTTF below design goals.
Excelics Semiconductor, Inc.
, 310 De Guine Drive, Sunnyvale, CA 94085 Phone: (408) 737-1711 Fax:...


Similar Datasheet


@ 2014 :: Datasheetspdf.com :: Semiconductors datasheet search & download site. (Privacy Policy & Contact)