Power transistor - Rohm
Description
2SC5826
Transistors
Power transistor (60V, 3A)
2SC5826
zFeatures 1) High speed switching.
(Tf : Typ.
: 30ns at IC = 3A) 2) Low saturation voltage, typically (Typ.
: 200mV at IC = 2A, IB = 0.
2mA) 3) Strong discharge power for inductive load and capacitance load.
4) Complements the 2SA2073 zExternal dimensions (Unit : mm)
ATV
6.
8 2.
5
0.
65Max.
1.
0
0.
5 2.
54 2.
54
0.
9
(1) (2) (3)
(1) Emitter (2) Collector (3) Base
1.
05
14.
5
4.
4
0.
45
Symbol : C5826
zApplications Low frequency amplifier High speed switching
zStructure NPN Silicon epitaxial planar transistor
zPackaging specifications
Package
Type
Taping
TV2 2500
Code Basic ordering unit (pieces)
2SC5826 www.
DataSheet4U.
com
zAbsolute maximum ratings (Ta=25°C)
Parameter Symbol VCBO VCEO VEBO DC IC ICP PC Limits 60 60 6 3 6 1.
0 150 −55 to 150 Unit V V V A A W °C °C
∗
Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current Power dissipation Junction temperature Range of storage temperature
∗Pw=100ms
Pulsed
Tj
Tstg
1/3
2SC5826
Transistors
zElectrical characteristics (Ta=25°C)
Parameter Collector-emitter breakdown voltage Collector-base breakdown voltage Emitter-base breakdown voltage Collector cut-off current Emitter cut-off current Symbol BVCEO BVCBO BVEBO ICBO IEBO Min.
60 60 6 − − Typ.
− − − − − Max.
− − − 1.
0 1.
0 Unit V V V µA µA Condition IC=1mA IC=100µA IE=100µA VCB=40V VEB=4V IC=2A IB=0.
2A VCE=2V IC=100mA VCE=10V IE= −100mA f=10MHz VCB=10V IE=0mA f=1MHz IC=3A IB1=300mA IB2= −300mA VCC 25V
Collector-emitter saturation voltage DC current gain
VCE (sat) hFE
−
120
∗1
200
500 390
mV
−
−
∗1
Transition frequency
fT
−
200
−
MHz
Corrector output capacitance Turn-on time Storage time Fall time
Cob Ton Tstg Tf
− − − −
20 50 150 30
− − − −
pF ns ns ns
∗2
∗1 Non repetitive pulse ∗2 See Switching charactaristics measurement circuits
zhFE RANK
Q 120−270 R 180−390
zElectrical characteristic curves
10
1000
Tstg
COLLECTOR CURRENT : IC (A)
1
DC CURRENT GAIN : ...
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