Silicon NPN Epitaxial Type Transistor - Hitachi Semiconductor
Description
2SC5827
Silicon NPN Epitaxial VHF/UHF wide band amplifier
ADE–208–1464(Z) Rev.
0 Nov.
2001 Features
• Super compact package: MFPAK (1.
4 x 0.
8 x 0.
59 mm)
Outline
MFPAK
3
1 2
1.
Emitter 2.
Base 3.
Collector
Note: Marking is “WW–”.
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2SC5827
Absolute Maximum Ratings
(Ta = 25 °C)
Item Collector to base voltage Collector to emitter voltage Emitter to base voltage Collector current Collector power dissipation Junction temperature Storage temperature Symbol VCBO VCEO VEBO IC Pc Tj Tstg Ratings 15 5.
5 1.
5 80 80 150 −55 to +150 Unit V V V mA mW °C °C
Electrical Characteristics
(Ta = 25 °C)
Item Collector to base breakdown voltage Collector cutoff current Collector cutoff current Emitter cutoff current DC current transfer ratio Collector output capacitance Gain bandwidth product Power gain www.
DataSheet4U.
com Noise figure Symbol V(BR)CBO ICBO ICEO IEBO hFE Cob fT PG NF Min 15 100 1.
5 10.
5 Typ 120 0.
85 4.
5 13.
5 1.
1 Max 0.
1 1 0.
1 150 1.
15 1.
8 Unit V µA µA µA pF GHz dB dB Test conditions IC = 10 µA, IE = 0 VCB = 15 V, IE = 0 VCE = 5.
5 V, RBE = Infinite VEB = 1.
5 V, IC = 0 VCE = 1 V, IC = 5 mA VCB = 1 V, IE = 0, f = 1 MHz VCE = 1 V, IC = 5 mA VCE = 1 V, IC = 5 mA, f = 900 MHz VCE = 1 V, IC = 5 mA, f = 900 MHz
Rev.
0, Nov.
2001, page 2 of 10
2SC5827
Collector Power Dissipation Curve
Collector Power Dissipation PC (mW)
100
Collector Current IC (mA)
20
Typical Output Characteristics 160 µA 140 µA 120 µA
100 µA
80 60
16 12
80 µA
60 µA
40
8
40 µA
20
4
IB = 20 µA
0
50
100
150
200
250
0
1
2
3
4
5
6
Ambient Temperature Ta (°C)
Collector to Emitter Voltage VCE (V)
Typical Transfer Characteristics 25
IC (mA)
200 VCE = 1 V
hFE
DC Current Transfer Ratio vs.
Collector Current VCE = 1 V
20
Collector Current
15
DC Current Transfer Ratio
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100
10
5
0
0.
2 0.
4 0.
6 0.
8 1.
0 Base to Emitter Voltage VBE (V)
0 0.
1
1.
0 10 Collector Current IC (mA)
100
Rev.
0, Nov.
2001, page 3 of 10
2SC5827
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