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2SD1485

Part Number	2SD1485
Manufacturer	Inchange Semiconductor
Description	Silicon NPN Power Transistor
Published	Nov 5, 2009
Detailed Description	isc Silicon NPN Power Transistor 2SD1485 DESCRIPTION ·Low Collector Saturation Voltage- : VCE(sat)= 2.0V(Max)@IC= 3A ·...
Datasheet	2SD1485 PDF File

Overview

isc Silicon NPN Power Transistor 2SD1485 DESCRIPTION ·Low Collector Saturation Voltage- : VCE(sat)= 2.
0V(Max)@IC= 3A ·Wide Area of Safe Operation ·Complement to Type 2SB1054 ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for high power amplifier applications.
ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 100 V VCEO Collector-Emitter Voltage 100 V VEBO Emitter-Base Voltage 5 V IC Collector Current-Continuous 5 A ICM Collector Current-Peak Collector Power Dissipation @ Ta=25℃ PC Collector Power Dissipation @ TC=25℃ TJ Junction Temperature 8 A 3 W 60 150 ℃ Tst...

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