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2SD1127

Part Number	2SD1127
Manufacturer	Inchange Semiconductor
Description	Power Transistor
Published	Sep 22, 2009
Detailed Description	isc Silicon NPN Darlington Power Transistor 2SD1127 DESCRIPTION ·Collector-Emitter Sustaining Voltage- : VCEO(SUS)= 12...
Datasheet	2SD1127 PDF File

Overview

isc Silicon NPN Darlington Power Transistor 2SD1127 DESCRIPTION ·Collector-Emitter Sustaining Voltage- : VCEO(SUS)= 120V(Min) ·High DC Current Gain : hFE= 1000(Min) @IC= 10A ·Low Saturation Voltage ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for power switching applications.
ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 120 V VCEO Collector-Emitter Voltage 120 V VEBO Emitter-Base Voltage 7 V IC Collector Current-Continuous 10 A ICP Collector Current-Peak PC Collector Power Dissipation @ TC=25℃ TJ Junction Temperature 15 A 50 W 150 ℃ Tstg Storage Tempe...

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