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BLS6G2731-120; BLS6G2731S-120
LDMOS S-band radar power transistor
Rev. 01 — 14 November 2008 Product data sheet
1. Product profile
1. 1 General description
120 W LDMOS power transistor intended for radar applications in the 2. 7 GHz to 3. 1 GHz range.
Table 1. Typical performance Typical RF performance at Tcase = 25 °C; tp = 100 µs; δ = 10 %; IDq = 100 mA; in a class-AB production test circuit. Mode of operation pulsed RF f (GHz) 2. 7 to 3. 1 VDS (V) 32 PL (W) 120 Gp (dB) 13. 5 ηD (%) 48 tr (ns) 20 tf (ns) 6
CAUTION This device is sensitive to ElectroStatic Discharge (ESD). Therefore care should be taken during transport and handling.
1. 2 Features
I Typical pulsed RF performance at a frequency of 2. 7 GHz to 3. 1 GHz, a supply voltage of 32 V, an IDq of 100 mA, a tp of 100 µs with δ of 10 %: N Output power = 120 W N Power gain = 13. 5 dB N Efficiency = 48 % I Easy power control I Integrated ESD protection I High flexibility with respect to pulse formats I Excellent ruggedness I High efficiency I Excellent thermal stability I Designed for broadband operation (2. 7 GHz to 3. 1 GHz) I Internally matched for ease of use I Compliant to Directive 2002/95/EC, regarding restriction of hazardous substances (RoHS)
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NXP Semiconductors
BLS6G2731-120; BLS6G2731S-120
LDMOS S-band radar power transistor
1. 3 Applications
I S-band power amplifiers for radar applications in the 2. 7 GHz to 3. 1 GHz frequency range
2. Pinning information
Table 2. Pin 1 2 3 Pinning Description drain gate source
[1]
Simplified outline
Graphic symbol
BLS6G2731-120 (SOT502A)
1 3 2 2 3
sym112
1
BLS6G2731S-120 (SOT502B) 1 2 3 drain gate source
[1]
1 3 2 2
1
3
sym112
[1]
Connected to flange.
3. Ordering information
Table 3. Ordering information Package Name BLS6G2731-120 Description Version flanged LDMOST ceramic package; 2 mounting holes; SOT502A 2 leads earless flanged LDMOST ceramic package; 2 leads SOT502B Type number
BLS6G2731S-120 -
4. Limiting values
Table 4. Lim...