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SSM3J112TU

Part Number	SSM3J112TU
Manufacturer	Toshiba Semiconductor
Description	Silicon P-Channel MOSFET
Published	Jul 7, 2009
Detailed Description	SSM3J112TU TOSHIBA Field Effect Transistor Silicon P-Channel MOS Type SSM3J112TU High Speed Switching Applications • ...
Datasheet	SSM3J112TU PDF File

Overview

SSM3J112TU TOSHIBA Field Effect Transistor Silicon P-Channel MOS Type SSM3J112TU High Speed Switching Applications • 4V drive • Low on-resistance: Ron = 790mΩ (max) (@VGS = −4 V) Ron = 390mΩ (max) (@VGS = −10 V) Absolute Maximum Ratings (Ta = 25°C) Unit: mm 2.
1±0.
1 1.
7±0.
1 0.
3-+00.
.
015 2.
0±0.
1 0.
65±0.
05 0.
166±0.
05 Characteristic Symbol Rating Unit Drain-Source voltage Gate-Source voltage Drain current DC Pulse Drain power dissipation Channel temperature Storage temperature range VDS −30 V VGSS ± 20 V ID −1.
1 A IDP −2.
2 PD (Note 1) 800 mW PD (Note 2) 500 Tch 150 °C Tstg −55 to 150 °C Note: Using continuously under heavy loads (e.
g.
the application of high temperature/current/voltage and the significant change in temperature, etc.
) may cause this product to decrease in the reliability significantly even if the operating conditions (i.
e.
operating temperature/current/voltage, etc.
) are within the absolute maximum ratings.
Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook (“Handling Precautions”/“Derating Concept and Methods”) and individual reliability data (i.
e.
reliability test report and estimated failure rate, etc).
Note 1: Mounted on ceramic board.
(25.
4 mm × 25.
4 mm × 0.
8 mm, Cu Pad: 645 mm2 ) Note 2: Mounted on FR4 board.
(25.
4 mm × 25.
4 mm × 1.
6 mm, Cu Pad: 645 mm2 ) Electrical Characteristics (Ta = 25°C) 1 2 3 0.
7±0.
05 1: Gate 2: Source 3: Drain UFM JEDEC ― JEITA ― TOSHIBA 2-2U1A Weight: 6.
6 mg (typ.
) Characteristic Drain-Source breakdown voltage Drain cut-off current Gate leakage current Gate threshold voltage Forward transfer admittance Drain-Source on-resistance Input capacitance Output capacitance Reverse transfer capacitance Switching time Turn-on time Turn-off time Drain-Source forward voltage Symbol Test Conditions Min Typ.
Max Unit V (BR) DSS V (BR) DSX ID = −1 mA, VGS = 0 ID = −1 mA, VGS = +20 V −30 ⎯ ⎯ V −15 ⎯ ⎯ IDSS VDS = −3...

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SSM3J112TU Silicon P-Channel MOSFET - Toshiba Semiconductor

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