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BLF6G21-10G

NXP
Part Number BLF6G21-10G
Manufacturer NXP
Description Power LDMOS Transistor
Published Jul 1, 2009
Detailed Description www.DataSheet4U.com BLF6G21-10G Power LDMOS transistor Rev. 01 — 11 May 2009 Objective data sheet 1. Product profile 1....
Datasheet PDF File BLF6G21-10G PDF File

BLF6G21-10G
BLF6G21-10G

Overview
www.
DataSheet4U.
com BLF6G21-10G Power LDMOS transistor Rev.
01 — 11 May 2009 Objective data sheet 1.
Product profile 1.
1 General description 10 W LDMOS power transistor for base station applications at frequencies from HF to 2200 MHz Table 1.
Typical performance IDq = 100 mA; Tcase = 25 °C in a common source class-AB production test circuit.
Mode of operation 2-carrier W-CDMA 1-carrier W-CDMA [1] f (MHz) 2110 to 2170 2110 to 2170 VDS (V) 28 28 PL(AV) (W) 0.
7 2 Gp (dB) 18.
5 19.
3 ηD (%) 15 31 ACPR (dBc) −50[1] −39[1] Test signal: 3GPP; test model 1; 64 DPCH; PAR = 7.
5 dB at 0.
01 % probability on CCDF per carrier; carrier spacing 5 MHz.
CAUTION This device is sensitive to ElectroStatic...


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