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AP4957M

Advanced Power Electronics
Part Number AP4957M
Manufacturer Advanced Power Electronics
Description P-CHANNEL ENHANCEMENT MODE POWER MOSFET
Published Jun 17, 2009
Detailed Description www.DataSheet4U.com AP4957M Advanced Power Electronics Corp. ▼ Low On-Resistance ▼ Simple Drive Requirement D1 D2 D1 D...
Datasheet PDF File AP4957M PDF File

AP4957M
AP4957M

Overview
www.
DataSheet4U.
com AP4957M Advanced Power Electronics Corp.
▼ Low On-Resistance ▼ Simple Drive Requirement D1 D2 D1 D2 P-CHANNEL ENHANCEMENT MODE POWER MOSFET BVDSS RDS(ON) ID G2 S2 -30V 24mΩ -7.
7A ▼ Dual P MOSFET Package SO-8 S1 G1 Description The Advanced Power MOSFETs from APEC provide the designer with the best combination of fast switching, ruggedized device design, ultra low on-resistance and cost-effectiveness.
D1 D2 G1 S1 G2 S2 Absolute Maximum Ratings Symbol VDS VGS ID@TA=25℃ ID@TA=70℃ IDM PD@TA=25℃ TSTG TJ Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current Continuous Drain Current Pulsed Drain Current 1 3 3 Rating -30 ±20 -7.
7 -6.
1 -30 2 0.
016 -...


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