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BLL6H0514-25

NXP
Part Number BLL6H0514-25
Manufacturer NXP
Description LDMOS Driver Transistor
Published Jun 10, 2009
Detailed Description BLL6H0514-25 LDMOS driver transistor Rev. 02 — 17 March 2009 www.datasheet4u.com Objective data sheet 1. Product profil...
Datasheet PDF File BLL6H0514-25 PDF File

BLL6H0514-25
BLL6H0514-25

Overview
BLL6H0514-25 LDMOS driver transistor Rev.
02 — 17 March 2009 www.
datasheet4u.
com Objective data sheet 1.
Product profile 1.
1 General description 25 W LDMOS transistor intended for pulsed applications in the 0.
5 GHz to 1.
4 GHz range.
Table 1.
Application information Typical RF performance at Tcase = 25 °C; IDq = 50 mA; in a class-AB application circuit.
Mode of operation pulsed RF f (MHz) 960 to 1215 1200 to 1400 tp (µs) 128 300 δ (%) 10 10 VDS (V) 50 50 PL (W) 25 25 Gp (dB) 21 19 RLin (dB) 10 10 ηD (%) 58 50 Pdroop(pulse) (dB) 0.
05 0.
05 tr (ns) 8 8 tf (ns) 6 6 CAUTION This device is sensitive to ElectroStatic Discharge (ESD).
Therefore care should be taken during transport and handling.
1.
2 Features I I I I I I I I Easy power control Integrated ESD protection High flexibility with respect to pulse formats Excellent ruggedness High efficiency Excellent thermal stability Designed for broadband operation (0.
5 GHz to 1.
4 GHz) Compliant to Directive 2002/95/EC, regarding Restriction of Hazardous Substances (RoHS) 1.
3 Applications I Amplifiers for pulsed applications in the 0.
5 GHz to 1.
4 GHz frequency range NXP Semiconductors BLL6H0514-25 LDMOS driver transistor 2.
Pinning information www.
datasheet4u.
com Table 2.
Pin 1 2 3 Pinning Description drain gate source [1] Simplified outline 1 3 2 Graphic symbol 1 2 3 sym112 [1] Connected to flange.
3.
Ordering information Table 3.
Ordering information Package Name BLL6H0514-25 Description flanged LDMOST ceramic package; 2 mounting holes; 2 leads Version SOT467C Type number 4.
Limiting values Table 4.
Limiting values In accordance with the Absolute Maximum Rating System (IEC 60134).
Symbol VDS VGS ID Tstg Tj Parameter drain-source voltage gate-source voltage drain current storage temperature junction temperature Conditions Min 0.
5 −65 Max 100 13 2.
5 +150 200 Unit V V A °C °C 5.
Thermal characteristics Table 5.
Symbol Zth(j-c) Thermal characteristics Parameter transient thermal impedance from junction to case Conditions...


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