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STPS20H100CG-1

STMicroelectronics

HIGH VOLTAGE POWER SCHOTTKY RECTIFIER - STMicroelectronics


STPS20H100CG-1
STPS20H100CG-1

PDF File STPS20H100CG-1 PDF File



Description
® STPS20H100CT/CF/CG/CG-1 HIGH VOLTAGE POWER SCHOTTKY RECTIFIER www.
datasheet4u.
com MAIN PRODUCT CHARACTERISTICS IF(AV) VRRM Tj VF (max) FEATURES AND BENEFITS n 2 x 10 A 100 V 175°C 0.
64 V A1 K A2 n n n n n NEGLIGIBLE SWITCHING LOSSES HIGH JUNCTION TEMPERATURE CAPABILITY GOOD TRADE OFF BETWEEN LEAKAGE CURRENT AND FORWARD VOLTAGE DROP LOW LEAKAGE CURRENT AVALANCHE RATED INSULATED PACKAGE: ISOWATT220AB Insulating Voltage = 2000V DC Capacitance = 45 pF A2 A1 K A2 K A1 ISOWATT220AB STPS20H100CF TO-220AB STPS20H100CT K DESCRIPTION Dual center tap schottky rectifier designed for high frequency miniature Switched Mode Power Supplies such as adaptators and on board DC/DC converters.
ABSOLUTE RATINGS (limiting values, per diode) Symbol VRRM IF(RMS) IF(AV) RMS forward current Average forward current δ = 0.
5 TO-220AB 2 2 D PAK / I PAK Tc = 160°C per diode per device Parameter Repetitive peak reverse voltage Value 100 30 10 20 250 1 3 - 65 to + 175 175 10000 Unit V A A A2 A1 A1 A2 K D2PAK STPS20H100CG I2PAK STPS20H100CG-1 ISOWATT220AB Tc = 145°C IFSM IRRM IRSM Tstg Tj dV/dt Surge non repetitive forward current Repetitive peak reverse current Non repetitive peak reverse current Storage temperature range Maximum operating junction temperature * Critical rate of rise of reverse voltage tp = 10 ms sinusoidal tp = 2 µs square F = 1kHz tp = 100 µs square A A A °C °C V/µs * : dPtot 1 < thermal runaway condition for a diode on its own heatsink dTj Rth( j − a ) 1/7 May 2000 - Ed: 3C STPS20H100CT/CF/CG/CG-1 THERMAL RESISTANCES Symbol Rth (j-c) www.
datasheet4u.
com Parameter Junction to case TO-220AB / D PAK / I PAK ISOWATT220AB TO-220AB / D PAK / I PAK ISOWATT220AB 2 2 2 2 Value Per diode Per diode Total Total 2 Unit °C/W 1.
6 4 0.
9 3.
2 0.
15 2.
5 °C/W Rth (c) TO-220AB / D PAK / I PAK ISOWATT220AB 2 Coupling Coupling When the diodes 1 and 2 are used simultaneously : ∆ Tj(diode 1) = P(diode1) x Rth(j-c)(Per diode) + P(diode 2) x Rth(c) STATIC ELECTRICAL CHAR...



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