DatasheetsPDF.com

LBC856AWT1

Leshan Radio Company
Part Number LBC856AWT1
Manufacturer Leshan Radio Company
Description (LBC85xxWT1) General Purpose Transistors PNP Silicon
Published Jun 2, 2009
Detailed Description LESHAN RADIO COMPANY, LTD. General Purpose Transistors www.datasheet4u.com PNP Silicon These transistors are designed ...
Datasheet PDF File LBC856AWT1 PDF File

LBC856AWT1
LBC856AWT1


Overview
LESHAN RADIO COMPANY, LTD.
General Purpose Transistors www.
datasheet4u.
com PNP Silicon These transistors are designed for general purpose amplifier applications.
They are housed in the SOT–323/ SC–70 which is designed for low power surface mount applications.
LBC856AWT1, BWT1 LBC857AWT1, BWT1 LBC858AWT1, BWT1 CWT1 3 Features Pb– Free Package May be Available.
The G.
Suffix Denotes a Pb– Free Lead Finish MAXIMUM RATINGS Rating Collector–Emitter Voltage Collector–Base Voltage Emitter–Base Voltage Collector Current — Continuous Symbol V CEO V CBO V EBO BC856 –65 –80 –5.
0 –100 BC857 –45 –50 –5.
0 –100 BC858 –30 –30 –5.
0 –100 Unit V V V mAdc 1 2 SOT– 323 / SC-70 IC 3 COLLECTOR THERMAL CHARACTERISTICS Characteristic Total Device Dissipation FR– 5 Board, (1) TA = 25°C Thermal Resistance, Junction to Ambient Junction and Storage Temperature Symbol PD R θJA T J , T stg Max 150 833 –55 to +150 Unit mW °C/W °C 2 EMITTER 1 BASE DEVICE MARKING LBC856AWT1 = 3A; LBC856BWT1 = 3B; LBC857AWT1 = 3E; LBC857BWT1 = 3F; LBC858AWT1 = 3J; LBC858BWT1 = 3K; LBC858CWT1 = 3L ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted.
) Characteristic Symbol Min Typ Max Unit OFF CHARACTERISTICS Collector–Emitter Breakdown Voltage (IC = –10 mA) Collector–Emitter Breakdown Voltage (IC = –10 µA, VEB = 0) Collector–Base Breakdown Voltage (IC = – 10 µA) Emitter–Base Breakdown Voltage (IE = – 1.
0 µA) LBC856 Series LBC857 Series LBC858 Series LBC856 Series LBC857 Series LBC858 Series LBC856 Series LBC857 Series LBC858 Series LBC856 Series LBC857 Series LBC858 Series V (BR)CEO V (BR)CES V (BR)CBO V (BR)EBO Collector Cutoff Current (VCB = – 30 V) (VCB = – 30 V, TA = 150°C) 1.
FR–5=1.
0 x 0.
75 x 0.
062in I CBO – 65 – 45 – 30 – 80 – 50 – 30 – 80 – 50 – 30 – 5.
0 – 5.
0 – 5.
0 — — — — — — — — — — — — — — — — — — — — — — — — — — — — – 15 – 4.
0 v v v v nA µA K6–1/6 LESHAN RADIO COMPANY, LTD.
LBC856AWT1, BWT1 LBC857AWT1, BWT1 LBC858AWT1, BWT1, CWT1 www.
datasheet4u.
com ELECTRICAL CH...


Similar Datasheet


@ 2014 :: Datasheetspdf.com :: Semiconductors datasheet search & download site. (Privacy Policy & Contact)