1A Low Vf MEGA Schottky Barrier Rectifier - NXP
Description
PMEG2010BER
1 A low VF MEGA Schottky barrier rectifier
Rev.
01 — 16 April 2009
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Product data sheet
1.
Product profile
1.
1 General description
Planar Maximum Efficiency General Application (MEGA) Schottky barrier rectifier with an integrated guard ring for stress protection, encapsulated in a SOD123W small and flat lead Surface-Mounted Device (SMD) plastic package.
1.
2 Features
I I I I I I Average forward current: IF(AV) ≤ 1 A Reverse voltage: VR ≤ 20 V Low forward voltage High power capability due to clip-bond technology AEC-Q101 qualified Small and flat lead SMD plastic package
1.
3 Applications
I I I I I Low voltage rectification High efficiency DC-to-DC conversion Switch Mode Power Supply (SMPS) Reverse polarity protection Low power consumption applications
1.
4 Quick reference data
Table 1.
Quick reference data Tj = 25 °C unless otherwise specified.
Symbol IF(AV) Parameter average forward current Conditions square wave; δ = 0.
5; f = 20 kHz Tamb ≤ 125 °C Tsp ≤ 140 °C VR VF IR
[1]
[1]
Min
Typ
Max
Unit
-
395 8
1 1 20 450 50
A A V mV µA
reverse voltage forward voltage reverse current IF = 1 A VR = 20 V
Device mounted on a ceramic Printed-Circuit Board (PCB), Al2O3, standard footprint.
NXP Semiconductors
PMEG2010BER
1 A low VF MEGA Schottky barrier rectifier
2.
Pinning information
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Table 2.
Pin 1 2
Pinning Description cathode anode
[1]
Simplified outline
Graphic symbol
1 2
sym001
1
2
[1]
The marking bar indicates the cathode.
3.
Ordering information
Table 3.
Ordering information Package Name PMEG2010BER Description plastic surface-mounted package; 2 leads Version SOD123W Type number
4.
Marking
Table 4.
Marking codes Marking code B6 Type number PMEG2010BER
5.
Limiting values
Table 5.
Limiting values In accordance with the Absolute Maximum Rating System (IEC 60134).
Symbol VR IF(AV) Parameter reverse voltage average forward current Conditions Tj = 25 °C square wave; δ = 0.
5; f = 20 kHz Tamb ≤ 125 °C Tsp ≤ 140 °C IFSM...
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