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2SC5387

Part Number	2SC5387
Manufacturer	Inchange
Title	Silicon NPN Power Transistor
Description	·High Breakdown Voltage- : VCBO= 1200V (Min) ·High Switching Speed ·Low Saturation Voltage ·100% ava...
Features	wise specified SYMBOL PARAMETER CONDITIONS MIN TYP. MAX UNIT V(BR)CEO Collector-Emitter Breakdown Voltage IC= 10mA;...
Published	May 24, 2009
Datasheet	2SC5387 PDF File

Features

wise specified SYMBOL PARAMETER CONDITIONS MIN TYP. MAX UNIT V(BR)CEO Collector-Emitter Breakdown Voltage IC= 10mA; IB= 0 600 V VCE(sat) Collector-Emitter Saturation Voltage IC= 8A; IB= 2A 3.0 V VBE(sat) Base-Emitter Saturation Voltage IC...

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