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2SC4125

Part Number	2SC4125
Manufacturer	Inchange
Description	Silicon NPN Power Transistor
Published	May 20, 2009
Detailed Description	isc Silicon NPN Power Transistor 2SC4125 DESCRIPTION ·High Breakdown Voltage- : VCBO= 1500V (Min) ·High Switching Spee...
Datasheet	2SC4125 PDF File

Overview

isc Silicon NPN Power Transistor 2SC4125 DESCRIPTION ·High Breakdown Voltage- : VCBO= 1500V (Min) ·High Switching Speed ·High Reliability ·Built-in Damper Diode ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for very high-definition color display horizontal deflection output applicaitions.
ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 1500 V VCEO Collector-Emitter Voltage 800 V VEBO Emitter-Base Voltage 6 V IC Collector Current- Continuous 10 A ICP Collector Current-Peak Collector Power Dissipation @ Ta=25℃ PC Collector Power Dissipation @ TC=25℃ TJ Junction Temp...

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