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BU2727DF

SavantIC
Part Number BU2727DF
Manufacturer SavantIC
Description SILICON POWER TRANSISTOR
Published May 13, 2009
Detailed Description SavantIC Semiconductor Product Specification Silicon NPN Power Transistors BU2727DF www.datasheet4u.com DESCRIPTION...
Datasheet PDF File BU2727DF PDF File

BU2727DF
BU2727DF


Overview
SavantIC Semiconductor Product Specification Silicon NPN Power Transistors BU2727DF www.
datasheet4u.
com DESCRIPTION ·With TO-3PFa package ·High voltage,high speed ·Built-in damper diode APPLICATIONS ·For use in horizontal deflection circuits of high resolution monitors PINNING PIN 1 2 3 Base Collector Emitter DESCRIPTION Absolute maximum ratings(Ta=25 ) SYMBOL VCBO VCEO VEBO IC ICM IB IBM Ptot Tj Tstg PARAMETER Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current (DC) Collector current -peak Base current (DC) Base current -peak Total power dissipation Junction temperature Storage temperature TC=25 Open emitter Open base Open collector CONDITIONS VALUE 1700 825 7.
5 12 30 12 25 45 150 -65~150 UNIT V V V A A A A W SavantIC Semiconductor Product Specification Silicon NPN Power Transistors CHARACTERISTICS Tj=25 unless otherwise specified PARAMETER Collector-emitter sustaining voltage Emitter-base breakdown voltage Collector-emitter saturation voltage Base-emitter saturation voltage Collector cut-off current Emitter cut-off current DC current gain DC current gain Diode forward voltage CONDITIONS IC=100mA ;IB=0,L=25mH IE=600mA ;IC=0 IC=5A ;IB=0.
91A IC=5A;IB=0.
91A VCE=BVCES; VBE=0 Tj=125 VEB=7.
5V; IC=0 IC=0.
1A ; VCE=5V IC=5A ; VCE=1V IF=7A 6 5.
5 MIN 825 7.
5 www.
datasheet4u.
com BU2727DF SYMBOL VCEO(SUS) V(BR)EBO VCEsat VBEsat ICES IEBO hFE-1 hFE-2 VF TYP.
MAX UNIT V 13.
5 1.
0 1.
0 1.
0 2.
0 110 V V V mA mA 11 2.
2 V 2 SavantIC Semiconductor Product Specification Silicon NPN Power Transistors PACKAGE OUTLINE www.
datasheet4u.
com BU2727DF Fig.
2 Outline dimensions (unindicated tolerance:±0.
30mm) 3 ...


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