SILICON POWER TRANSISTOR - SavantIC
Description
SavantIC Semiconductor
Product Specification
Silicon NPN Power Transistors
BU2508DX
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DESCRIPTION ·With TO-3PML package ·High voltage;high speed ·Built-in damper diode APPLICATIONS ·For use in horizontal deflection circuits of color TV receivers
PINNING PIN 1 2 3 Base Collector Emitter Fig.
1 simplified outline (TO-3PML) and symbol DESCRIPTION
Absolute maximum ratings(Ta=25 )
SYMBOL VCBO VCEO VEBO IC ICM IB IBM Ptot Tj Tstg PARAMETER Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current (DC) Collector current (Pulse) Base current (DC) Base current (Pulse) Total power dissipation Junction temperature Storage temperature TC=25 Open emitter Open base Open collector CONDITIONS VALUE 1500 700 7.
5 8 15 4 6 45 150 -55~150 UNIT V V V A A A A W
SavantIC Semiconductor
Product Specification
Silicon NPN Power Transistors
CHARACTERISTICS
Tj=25 unless otherwise specified PARAMETER Collector-emitter sustaining voltage Emitter-base breakdown voltage Collector-emitter saturation voltage Base-emitter saturation voltage Collector cut-off current Emitter cut-off current DC current gain DC current gain Diode forward voltage Collector capacitance CONDITIONS IC=100mA ;IB=0,L=25mH IE=600mA ;IC=0 IC=4.
5A ;IB=1.
12A IC=4.
5A ;IB=1.
7A VCE=BVCES; VBE=0 Tj=125 VEB=7.
5V; IC=0 IC=1A ; VCE=5V IC=4.
5A ; VCE=1V IF=4.
5A IE=0 ; VCB=10V;f=1MHz 4 MIN 700 7.
5
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BU2508DX
SYMBOL VCEO(SUS) V(BR)EBO VCEsat VBEsat ICES IEBO hFE-1 hFE-2 VF CC
TYP.
MAX
UNIT V
13.
5 1.
0 1.
1 1.
0 2.
0 227 13 7 2.
0 80
V V V mA mA
V pF
2
SavantIC Semiconductor
Product Specification
Silicon NPN Power Transistors
PACKAGE OUTLINE
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BU2508DX
Fig.
2 Outline dimensions
3
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