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BDT83

Inchange Semiconductor
Part Number BDT83
Manufacturer Inchange Semiconductor
Description Silicon NPN Power Transistor
Published May 10, 2009
Detailed Description isc Silicon NPN Power Transistors BDT81/83/85/87 DESCRIPTION ·DC Current Gain -hFE = 40(Min)@ IC= 5A ·Collector-Emitte...
Datasheet PDF File BDT83 PDF File

BDT83
BDT83


Overview
isc Silicon NPN Power Transistors BDT81/83/85/87 DESCRIPTION ·DC Current Gain -hFE = 40(Min)@ IC= 5A ·Collector-Emitter Sustaining Voltage- : VCEO(SUS) = 60V(Min)- BDT81; 80V(Min)- BDT83; 100V(Min)- BDT85; 120V(Min)- BDT87 ·Complement to Type BDT82/84/86/88 ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for use in audio output stages and general amplifer and switching applications ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT BDT81 60 BDT83 80 VCBO Collector-Base Voltage V BDT85 100 BDT87 120 BDT81 60 VCEO Collector-Emitter Voltage BDT83 80 V BDT85 100 BDT87 120 VEBO Emitter-Base Voltage 7 V IC Collector Current-Continuous 15 A ICM Collector Current-Peak 20 A IB Base Current PC Collector Power Dissipation TC=25℃ Tj Junction Temperature 4 A 125 W 150 ℃ Tstg Storage Temperature Range -65~150 ℃ THERMAL CHARACTERISTICS SYMBOL PARAMETER Rth j-c Rth j-a Thermal Resistance,Junction to Case Thermal Resistance,Junction to Ambient isc website：www.
iscsemi.
com MAX UNIT 1 ℃/W 70 ℃/W 1 isc & iscsemi is registered trademark isc Silicon NPN Power Transistors ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS BDT81 VCEO(SUS) Collector-Emitter Sustaining Voltage BDT83 BDT85 IC= 30mA; IB= 0 BDT87 VCE(sat)-1 VCE(sat)-2 VBE(on) ICES Collector-Emitter Saturation Voltage Collector-Emitter Saturation Voltage Base-Emitter On Voltage Collector Cutoff Current IC= 5A; IB= 0.
5A IC= 7A; IB= 0.
7A IC= 5A ; VCE= 4V VCE= VCBOmax; VBE= 0 ICBO Collector Cutoff Current VCB= VCBOmax; IE= 0 IEBO Emitter Cutoff Current VEB= 7V; IC= 0 hFE-1 DC Current Gain IC= 50mA ; VCE= 10V hFE-2 DC Current Gain IC= 5A ; VCE= 4V fT Current-Gain—Bandwidth Product IC= 0.
5A ; VCE= 10V Switching Times ton Turn-On Time toff Turn-Off Time IC= 7A; IB1= -IB2= 0.
7A BDT81/83/85/87 MIN TYP.
MAX UNIT 60 80 V 100 120 1.
0...


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