SILICON POWER TRANSISTOR - SavantIC
Description
SavantIC Semiconductor
Product Specification
Silicon NPN Power Transistors
2SD1975 2SD1975A
www.
datasheet4u.
com
DESCRIPTION ·With TO-3PL package ·Complement to type 2SB1317/1317A ·Wide area of safe operation ·High transition frequency fT APPLICATIONS ·For high power amplification ·Optimum for the output stage of a Hi-Fi audio amplifier
PINNING PIN 1 2 3 Base Collector;connected to mounting base Emitter DESCRIPTION
Fig.
1 simplified outline (TO-3PL) and symbol
Absolute maximum ratings(Ta=25 )
SYMBOL VCBO PARAMETER 2SD1975 Collector-base voltage 2SD1975A 2SD1975 VCEO VEBO IC ICM PC Tj Tstg Collector-emitter voltage 2SD1975A Emitter-base voltage Collector current Collector current-peak Ta=25 Collector power dissipation TC=25 Junction temperature Storage temperature 150 150 -55~150 Open collector Open base 200 5 15 25 3.
5 W V A A Open emitter 200 180 V CONDITIONS VALUE 180 V UNIT
SavantIC Semiconductor
Product Specification
Silicon NPN Power Transistors
CHARACTERISTICS
Tj=25 unless otherwise specified PARAMETER Collector-emitter saturation voltage Emitter-base voltage 2SD1975 2SD1975A CONDITIONS IC=10A ;IB=1A IC=8A ; VCE=5V VCB=180V; IE=0
www.
datasheet4u.
com
2SD1975 2SD1975A
SYMBOL VCEsat VBE
MIN
TYP.
MAX 2.
5 1.
8
UNIT V V
ICBO
Collector cut-off current
50 VCB=200V; IE=0 VEB=3V; IC=0 IC=20mA ; VCE=5V IC=1A ; VCE=5V IC=8A ; VCE=5V IC=0.
5A ; VCE=5V f=1MHz;VCB=10V 20 60 20 20 200 200 50
µA
IEBO hFE-1 hFE-2 hFE-3 fT COB
Emitter cut-off current DC current gain DC current gain DC current gain Transition frequency Collector output capacitance
µA
MHz pF
hFE-2 classifications Q 60-120 S 80-160 P 100-200
2
SavantIC Semiconductor
Product Specification
Silicon NPN Power Transistors
PACKAGE OUTLINE
www.
datasheet4u.
com
2SD1975 2SD1975A
Fig.
2 Outline dimensions (unindicated tolerance:±0.
50 mm)
3
SavantIC Semiconductor
Product Specification
Silicon NPN Power Transistors
2SD1975 2SD1975A
www.
datasheet4u.
com
4
...
Similar Datasheet
