SILICON POWER TRANSISTOR - SavantIC
Description
SavantIC Semiconductor
Product Specification
Silicon NPN Power Transistors
2SD1136
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DESCRIPTION ·With TO-220C package ·High collector-base breakdown voltage : VCBO=200V(min)
APPLICATIONS ·For power switching and TV vertical deflection output applications
PINNING PIN 1 2 3 Base Collector;connected to mounting base Emitter DESCRIPTION
Absolute maximum ratings(Ta=25 )
SYMBOL VCBO VCEO VEBO IC ICM PARAMETER Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current Collector current-Peak Ta=25 PC Collector power dissipation TC=25 Tj Tstg Junction temperature Storage temperature 30 150 -45~150 Open emitter Open base Open collector CONDITIONS VALUE 200 80 5 4 5 1.
8 W UNIT V V V A A
SavantIC Semiconductor
Product Specification
Silicon NPN Power Transistors
2SD1136
CHARACTERISTICS
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Tj=25
unless otherwise specified PARAMETER Collector-emitter breakdown voltage Emitter-base breakdown votage Collector-emitter saturation voltage Base-emitter saturation voltage Collector cut-off current Collector cut-off current DC current gain CONDITIONS IC=50mA; IB=0 IE=1mA; IC=0 IC=4 A;IB=0.
4 A IC=4 A;IB=0.
4 A VCE=200V; IB=0 VEB=5V; IC=0 IC=4A ; VCE=5V 20 MIN 80 5 1.
5 1.
5 50 50 TYP.
MAX UNIT V V V V
SYMBOL V(BR)CEO V(BR)EBO VCEsat VBEsat ICEO IEBO hFE
2
SavantIC Semiconductor
Product Specification
Silicon NPN Power Transistors
PACKAGE OUTLINE
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2SD1136
Fig.
2 Outline dimensions (unindicated tolerance:±0.
10 mm)
3
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