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IS41C8200

Integrated Silicon Solution
Part Number IS41C8200
Manufacturer Integrated Silicon Solution
Description 2M x 8 (16-MBIT) DYNAMIC RAM
Published Apr 24, 2009
Detailed Description IS41C8200 IS41LV8200 2M x 8 (16-MBIT) DYNAMIC RAM WITH EDO PAGE MODE www.datasheet4u.com FEATURES ISSI DESCRIPTION ® ...
Datasheet PDF File IS41C8200 PDF File

IS41C8200
IS41C8200

Overview
IS41C8200 IS41LV8200 2M x 8 (16-MBIT) DYNAMIC RAM WITH EDO PAGE MODE www.
datasheet4u.
com FEATURES ISSI DESCRIPTION ® JUNE 2001 • Extended Data-Out (EDO) Page Mode access cycle • TTL compatible inputs and outputs • Refresh Interval: -- 2,048 cycles/32 ms • Refresh Mode: RAS-Only, CAS-before-RAS (CBR), and Hidden • Single power supply: 5V±10% or 3.
3V ± 10% • Byte Write and Byte Read operation via two CAS • Industrial temperature range -40°C to 85°C The ISSI IS41C8200 and IS41LV8200 are 2,097,152 x 8-bit highperformance CMOS Dynamic Random Access Memory.
These devices offer an accelarated cycle access called EDO Page Mode.
EDO Page Mode allows 2,048 random accesses within a single row with...


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