(CMBTA05 / CMBTA06) TRANSISTORS - CDIL
Description
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Continental Device India Limited
An ISO/TS 16949, ISO 9001 and ISO 14001 Certified Company
SOT-23 Formed SMD Package
CMBTA05 CMBTA06
SILICON EPITAXIAL TRANSISTORS
N–P–N transistor
Marking CMBTA05 = 1H CMBTA06 = 1G
PACKAGE OUTLINE DETAILS ALL DIMENSIONS IN m m
Pin configuration 1 = BASE 2 = EMITTER 3 = COLLECTOR
3
1
2
ABSOLUTE MAXIMUM RATINGS Collector–base voltage (open emitter) VCBO Collector–emitter voltage (open base) VCEO Emitter–base voltage (open collector) VEBO Collector current (d.
c.
) IC Total power dissipation up to Tamb = 25 °C Ptot D.
C.
current gain hFE IC = 100 mA; VCE = 1 V Transition frequency at f = 100 MHz fT IC = 10 mA; VCE = 2 V Collector–emitter saturation voltage VCEsat IC = 100 mA; IB = 10 mA CMBT A05 max.
60 max.
60 max.
max.
max.
min.
min.
max.
A06 80 V 80 V V mA mW
4 500 250 100 100 0.
25
MHz
V
Continental Device India Limited
Data Sheet
Page 1 of 3
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CMBTA05 CMBTA06
RATINGS (at TA = 25°C unless otherwise specified) Limiting values Collector–base voltage (open emitter) VCBO Collector–emitter voltage (open base) VCEO Emitter–base voltage (open collector) VEBO Collector current (d.
c.
) IC Total power dissipation up to Tamb = 25 °C Ptot Storage temperature Tstg Junction temperature Tj THERMAL CHARACTERISTICS Tj = P (Rth j–t + Rth t–s + Rth s–a) + Tamb Thermal resistance from junction to ambient
max.
max.
max.
max.
max.
max.
max.
60 60
80 V 80 V 4 V 500 mA 250 mW –55 to +150 °C 150 °C
Rth j–a
=
500
K/W
CHARACTERISTICS (at TA = 25°C unless otherwise specified) CMBT A05 Collector–emitter breakdown voltage V(BR)CEO min.
60 IC = 1 mA; IB = 0 Emitter–base breakdown voltage V(BR)EBO min.
IC = 0; IE = 100 µA Collector cut–off current ICEO max.
VCE = 60 V; IB = 0 ICBO max.
0.
1 VCB = 60 V; IE = 0 ICBO max.
VCB = 80 V; IE = 0 Saturation voltages VCEsat max.
IC = 100 mA; IB = 10 mA Base–emitter on voltage VBE(on) max.
IC = 100 mA; VCE = 1 V D.
C.
current gain hFE min.
IC = 10 mA; VCE = 1 V hFE mi...
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