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BD234

Inchange Semiconductor
Part Number BD234
Manufacturer Inchange Semiconductor
Description Silicon PNP Power Transistor
Published Apr 18, 2009
Detailed Description isc Silicon PNP Power Transistor INCHANGE Semiconductor BD234/236/238 DESCRIPTION ·DC Current Gain- : hFE= 40(Min)@ IC...
Datasheet PDF File BD234 PDF File

BD234
BD234

Overview
isc Silicon PNP Power Transistor INCHANGE Semiconductor BD234/236/238 DESCRIPTION ·DC Current Gain- : hFE= 40(Min)@ IC= -0.
15A ·Complement to Type BD233/235/237 ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for use in 5~10 watt audio amplifiers and drivers utilizing complementary or quasi complementary circuits.
ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT BD234 -45 VCBO Collector-Base Voltage BD236 -60 V BD238 -100 BD234 -45 VCEO Collector-Emitter Voltage BD236 -60 V BD238 -80 VCER Collector-Emitter Voltage(RBE= 1kΩ) BD234 -45 BD236 -60 V BD238 -100 VEBO Emitter-Base Voltage -5 V IC Collector Current-Continuous -2 A ICM Collector Current-Peak -6 A IB Base Current-Continuous PC Collector Power Dissipation @ TC=25℃ TJ Junction Temperature Tstg Storage Temperature Range -0.
5 A 25 W 150 ℃ -65~150 ℃ isc website：www.
iscsemi.
com 1 isc & iscsemi is registe...


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