2SC3420 - Toshiba
Description
2SC3420
TOSHIBA Transistor Silicon NPN Epitaxial Type (PCT Process)
2SC3420
Strobe Flash Applications Audio Power Amplifier Applications
Unit: mm
• • •
High DC current gain : hFE = 140 to 600 (VCE = 2 V, IC = 0.
5 A) : hFE = 70 (min) (VCE = 2 V, IC = 4 A) Low saturation voltage: VCE (sat) = 1.
0 V (max) (IC = 4 A, IB = 0.
1 A) High collector power dissipation: PC = 10 W (Tc = 25°C), PC = 1.
5 W (Ta = 25°C)
Absolute Maximum Ratings (Tc = 25°C)
Characteristics Collector-base voltage Collector-emitter voltage Emitter-base voltage DC Collector current Pulse (Note 1) Base current Collector power dissipation Junction temperature Storage temperature range Ta = 25°C Tc = 25°C Symbol VCBO VCES VCEO VEBO IC ICP IB PC Tj Tstg Rating 50 40 20 8 5 8
www.
DataSheet.
co.
kr
Unit V V V
JEDEC
A
― ― 2-8H1A
JEITA TOSHIBA
1 1.
5 10 150 −55 to 150
A W °C °C
Weight: 0.
82 g (typ.
)
Note 1: Pulse test: Pulse width = 10 ms (max) Duty cycle = 30% (max) Note 2: Using continuously under heavy loads (e.
g.
the application of high temperature/current/voltage and the significant change in temperature, etc.
) may cause this product to decrease in the reliability significantly even if the operating conditions (i.
e.
operating temperature/current/voltage, etc.
) are within the absolute maximum ratings.
Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook (“Handling Precautions”/Derating Concept and Methods) and individual reliability data (i.
e.
reliability test report and estimated failure rate, etc).
1
2006-11-09
Datasheet pdf - http://www.
DataSheet4U.
net/
2SC3420
Electrical Characteristics (Tc = 25°C)
Characteristics Collector cut-off current Emitter cut-off current Collector-emitter breakdown voltage Symbol ICBO IEBO V (BR) CEO hFE (1) DC current gain (Note 3) hFE (2) Collector-emitter saturation voltage Base-emitter voltage Transition frequency Collector output capacitance VCE (sat) VBE fT Cob Test Condition VCB = 40 V, IE = 0 VEB = 8 V, IC = ...
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