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SPB80N03S2L-05

Infineon Technologies
Part Number SPB80N03S2L-05
Manufacturer Infineon Technologies
Description Power-Transistor
Published Mar 27, 2009
Detailed Description www.DataSheet4U.com SPI80N03S2L-05 SPP80N03S2L-05,SPB80N03S2L-05 OptiMOS® Power-Transistor Feature • N-Channel Produc...
Datasheet PDF File SPB80N03S2L-05 PDF File

SPB80N03S2L-05
SPB80N03S2L-05

Overview
www.
DataSheet4U.
com SPI80N03S2L-05 SPP80N03S2L-05,SPB80N03S2L-05 OptiMOS® Power-Transistor Feature • N-Channel Product Summary VDS R DS(on) ID P- TO262 -3-1 P- TO263 -3-2 30 5.
2 80 P- TO220 -3-1 V mΩ A • Enhancement mode • Logic Level • Excellent Gate Charge x R DS(on) product (FOM) • Superior thermal resistance • 175°C operating temperature • Avalanche rated • dv/dt rated Type SPP80N03S2L-05 SPB80N03S2L-05 SPI80N03S2L-05 Package P- TO220 -3-1 P- TO263 -3-2 P- TO262 -3-1 Ordering Code Q67042-S4033 Q67042-S4032 Q67042-S4093 Marking 2N03L05 2N03L05 2N03L05 Maximum Ratings, at Tj = 25 °C, unless otherwise specified Parameter Symbol Continuous drain current 1) TC=25°C Value 80 80 320 325 16 6 ±20 167 -55.
.
.
+175 55/175/56 Unit A ID Pulsed drain current TC=25°C ID puls EAS EAR dv/dt VGS Ptot T j , Tstg Avalanche energy, single pulse ID=80 A , V DD=25V, RGS=25Ω mJ Repetitive avalanche energy, limited by Tjmax 2) Reverse diode d v/dt IS=80A, VDS=24V, di/dt=200A/µs, T jmax=175°C kV/µs V W °C Gate source voltage Power dissipation TC=25°C Operating and storage temperature IEC climatic category; DIN IEC 68-1 Page 1 2003-04-24 www.
DataSheet4U.
com SPI80N03S2L-05 SPP80N03S2L-05,SPB80N03S2L-05 Thermal Characteristics Parameter Characteristics Thermal resistance, junction - case SMD version, device on PCB: @ min.
footprint @ 6 cm2 cooling area 3) Symbol min.
RthJC RthJA - Values typ.
0.
6 max.
0.
9 62 40 Unit K/W Electrical Characteristics, at Tj = 25 °C, unless otherwise specified Parameter Static Characteristics Drain-source breakdown voltage V GS=0V, ID=1mA Symbol min.
V(BR)DSS VGS(th) IDSS IGSS RDS(on) RDS(on) 30 1.
2 Values typ.
1.
6 max.
2 Unit V Gate threshold voltage, VGS = V DS ID=110µA Zero gate voltage drain current V DS=30V, VGS=0V, Tj=25°C V DS=30V, VGS=0V, Tj=125°C µA 0.
01 10 1 1 100 100 nA mΩ 5.
6 5.
2 4 3.
7 7.
5 7.
2 5.
2 4.
9 Gate-source leakage current V GS=20V, VDS=0V Drain-source on-state resistance V GS=4.
5V, I D=55A V GS=4.
5V, I ...


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