2SC2209 Datasheet

2SC2209 SILICON POWER TRANSISTOR

·With TO-126 package ·Complement to type 2SA963 ·High collector power dissipation APPLICATIONS ·For low-frequency power amplification PINNING PIN 1 2 3 DESCRIPTION Emitter Collector;connected to mounting base Base Absolute Maximun Ratings (Ta=25 ) SYMBOL VCBO VCEO VEBO IC ICM PC Tj Tstg PARAMETER C.

Features

tage Collector cut-off current Collector cut-off current Emitter cut-off current DC current gain Output capacitance Transition frequency CONDITIONS IC=2mA;IB=0 IC=1mA ;IE=0 IC=1.5A ;IB=150mA IC=2A ;IB=0.2A VCB=20V; IE=0 VCE=10V; IB=0 VEB=5V; IC=0 IC=1A ; VCE=5V IE=0 ; VCB=5V;f=1MHz IC=0.5A ; VCB=5V,f=200MHz 80 MIN 40 50 2SC2209 SYMBOL V(BR)CEO V(BR)CBO VCEsat VBEsat ICBO ICEO IEBO hFE COB fT TYP. MAX UNIT V V 1.0 1.5 1 100 10 220 50 150 V V µA µA µA pF MHz hFE Classifications Q 80-160 R 120-220 2 SavantIC Semiconductor www.DataSheet4U.com Product Specification Silicon NPN Power Tr.