DATA SHEET
MOS FIELD EFFECT TRANSISTOR
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2SK3639
SWITCHING N-CHANNEL POWER MOS FET
DESCRIPTION
The 2SK3639 is N-channel MOS FET device that features a low on-state resistance and excellent switching characteristics, and designed for low voltage high current applications such as DC/DC converter with synchronous rectifier.
ORDERING INFORMATION
PART NUMBER 2SK3639-ZK PACKAGE TO-252 (MP-3ZK)
(TO-252)
FEATURES
• Low on-state resistance RDS(on)1 = 5. 5 mΩ MAX. (VGS = 10 V, ID = 32 A) RDS(on)2 = 8. 5 mΩ MAX. (VGS = 4. 5 V, ID = 32 A) • Low Ciss: Ciss = 2400 pF TYP.
ABSOLUTE MAXIMUM RATINGS (TA = 25°C)
Drain to Source Voltage (VGS = 0 V) Gate to Source Voltage (VDS = 0 V) Drai...