SILICON POWER TRANSISTOR - SavantIC
Description
SavantIC Semiconductor
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DataSheet4U.
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Product Specification
Silicon PNP Power Transistors
2SB1556
DESCRIPTION ·With TO-3PL package ·Complement to type 2SD2385 ·High DC current gain ·Low collector saturation voltage ·DARLINGTON APPLICATIONS ·For power amplifier applications
PINNING PIN 1 2 3 Base Collector;connected to mounting base Emitter Fig.
1 simplified outline (TO-3PL) and symbol DESCRIPTION
Absolute maximum ratings(Ta=25 )
SYMBOL VCBO VCEO VEBO IC IB PC Tj Tstg PARAMETER Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current Base current Collector power dissipation Junction temperature Storage temperature TC=25 Open emitter Open base Open collector CONDITIONS VALUE -140 -140 -5 -8 -0.
1 120 150 -55~150 UNIT V V V A A W
SavantIC Semiconductor
www.
DataSheet4U.
com
Product Specification
Silicon PNP Power Transistors
CHARACTERISTICS
Tj=25 unless otherwise specified PARAMETER Collector-emitter breakdown voltage Collector-emitter saturation voltage Base-emitter voltage Collector cut-off current Emitter cut-off current DC current gain DC current gain Collector output capacitance Transition frequency CONDITIONS IC=-50mA ;IB=0 IC=-7A ;IB=-7mA IC=-7A ; VCE=-5V VCB=-140V; IE=0 VEB=-5V; IC=0 IC=-7A ; VCE=-5V IC=-12A ; VCE=-5V IE=0 ; VCB=-10V f=1MHz IC=-1A ; VCE=-5V 5000 2000 MIN -140
2SB1556
SYMBOL V(BR)CEO VCEsat VBE ICBO IEBO hFE-1 hFE-2 COB fT
TYP.
MAX
UNIT V
-2.
5 -3.
0 -5.
0 -5.
0 30000
V V µA µA
170 30
pF MHz
hFE-2 classifications A 5000-12000 B 9000-18000 C 15000-30000
2
SavantIC Semiconductor
www.
DataSheet4U.
com
Product Specification
Silicon PNP Power Transistors
PACKAGE OUTLINE
2SB1556
Fig.
2 Outline dimensions (unindicated tolerance:±0.
50 mm)
3
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