SavantIC Semiconductor
www. DataSheet4U. com
Product Specification
Silicon PNP Power Transistors
2SB1342
DESCRIPTION ·With TO-220Fa package ·High DC current gain ·Low saturation voltage ·DARLINGTON APPLICATIONS ·For low frequency power amplifier and power driver applications
PINNING PIN 1 2 3 Base Collector Emitter Fig. 1 simplified outline (TO-220Fa) and symbol DESCRIPTION
Absolute maximum ratings(Ta=25 )
SYMBOL VCBO VCEO VEBO IC ICM PARAMETER Collector-base voltage Collector -emitter voltage Emitter-base voltage Collector current Collector current-peak Ta=25 PC Collector power dissipation TC=25 Tj Tstg Junction temperature Storage temperature 30 150 -55~150 CONDITIONS Open emitter Open base Open collector VALUE -80 -80 -7 -4 -6 2 W UNIT V V V A A
SavantIC Semiconductor
www. DataSheet4U. com
Product Specification
Silicon PNP Power Transistors
2SB1342
CHARACTERISTICS
Tj=25 unless otherwise specified PARAMETER Collector-emitter breakdown voltage Collector-base breakdown voltage Collector-emitter saturation voltage Collector cut-off current Emitter cut-off current DC current gain Transition frequency Output capacitance CONDITIONS IC=-1mA; IB=0 IC=-50µA; IE=0 IC=-2A ;IB=-4mA VCB=-80V; IE=0 VEB=-5V; IC=0 IC=-2A ; VCE=-3V IC=-0. 5A ; VCE=-5V IE=0 ; VCB=-10V;f=1MHz 1000 12 45 MIN -80 -80 -1. 0 -1. 5 -100 -3. 0 10000 MHz pF TYP. MAX UNIT V V V µA mA
SYMBOL V(BR)CEO V(BR)CBO VCEsat ICBO IEBO hFE fT COB
2
SavantIC Semiconductor
www. DataSheet4U. com
Product Specification
Silicon PNP Power Transistors
PACKAGE OUTLINE
2SB1342
Fig. 2 Outline dimensions (unindicated tolerance: ±0. 15 mm)
3
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2SB1342 PDF File
