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2SC2757

Part Number	2SC2757
Manufacturer	Inchange
Description	Silicon Power Transistor
Published	Feb 17, 2009
Detailed Description	isc Silicon NPN RF Transistor INCHANGE Semiconductor 2SC2757 DESCRIPTION ·Low Noise ·High Current-Gain Bandwidth Produ...
Datasheet	2SC2757 PDF File

Overview

isc Silicon NPN RF Transistor INCHANGE Semiconductor 2SC2757 DESCRIPTION ·Low Noise ·High Current-Gain Bandwidth Product ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for use in VHF RF amplifier, local oscillator, mixer.
ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 30 V VCEO Collector-Emitter Voltage 15 V VEBO Emitter-Base Voltage 5 V IC Collector Current-Continuous PC Collector Power Dissipation @TC=25℃ TJ Junction Temperature 50 mA 0.
15 W 125 ℃ Tstg Storage Temperature Range -55~125 ℃ isc website：www.
iscsemi.
cn 1 isc & iscsemi is registered trademark ...

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